Semiconductor package and method of fabricating the same

ABSTRACT

A semiconductor package may include a package substrate, a first interposer substrate mounted on the package substrate, and a first semiconductor chip disposed on the first interposer substrate. The first interposer substrate may include a first base layer, a second base layer disposed on the first base layer, circuit patterns provided in each of the first base layer and the second base layer, and an integrated device embedded in the first base layer and connected to at least one of the circuit patterns. A top surface of the first base layer may contact a bottom surface of the second base layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application is a continuationapplication of U.S. patent application Ser. No. 16/583,051, filed onSep. 25, 2019, which claims priority under 35 U.S.C. § 119 to KoreanPatent Application No. 10-2019-0034502, filed on Mar. 26, 2019, in theKorean Intellectual Property Office, the entire contents of each ofwhich are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present disclosure relates to a semiconductor package and a methodof fabricating the same, and in particular, to a semiconductor packageincluding an interposer substrate and a method of fabricating the same.

In the case where an integrated circuit (IC) chip is provided in theform of a semiconductor package, it can be easily used as a part of anelectronic product. In general, the semiconductor package includes aprinted circuit board (PCB) and a semiconductor chip, which is mountedon the PCB and is electrically connected to the PCB by bonding wires orbumps.

With recent advances in the electronic industry, there is an increasingdemand for high-performance, high-speed and compact electroniccomponents. To meet such a demand, recent packaging technologies arebeing developed to mount a plurality of semiconductor chips in a singlepackage. In the case where a final structure of a package includes aplurality of semiconductor packages, an interposer may be providedbetween the semiconductor packages to electrically connect them to eachother. By using the interposer, it is possible to easily connect thesemiconductor packages and to increase a degree of freedom inconstructing an interconnection structure between the semiconductorpackages.

SUMMARY

An embodiment of the inventive concept provides an interposer substrateof a large area, a semiconductor package including the same, and amethod of fabricating the same.

An embodiment of the inventive concept provides a highly-integratedsemiconductor package and a method of fabricating the same.

An embodiment of the inventive concept provides a semiconductor packagewith improved electric characteristics and a method of fabricating thesame.

According to an embodiment of the inventive concept, a semiconductorpackage may include a package substrate, a first interposer substratemounted on the package substrate, and a first semiconductor chipdisposed on the first interposer substrate. The first interposersubstrate may include a first base layer, a second base layer disposedon the first base layer, circuit patterns provided in each of the firstbase layer and the second base layer, and an integrated device embeddedin the first base layer and connected to at least one of the circuitpatterns. A top surface of the first base layer may contact a bottomsurface of the second base layer.

According to an embodiment of the inventive concept, a semiconductorpackage may include a package substrate, a first silicon interposerdisposed on the package substrate, the first silicon interposerincluding an interconnection pattern, a second silicon interposerdisposed on the first silicon interposer, the second silicon interposerincluding a through electrode, and at least one semiconductor chipmounted on the second silicon interposer. Surfaces of the first siliconinterposer and the second silicon interposer may connect to each otherat a boundary interface, such that the interconnection pattern and thethrough electrode are connected to each other.

According to an embodiment of the inventive concept, a method offabricating a semiconductor package may include providing a firstsub-interposer substrate, which includes a first base layer and aninterconnection pattern provided in the first base layer, providing asecond sub-interposer substrate, which includes a second base layer anda through electrode formed in the second base layer, disposing thesecond sub-interposer substrate on the first sub-interposer substrate tobring surfaces of the first base layer and the second base layer intocontact with each other, mounting a semiconductor chip on the secondsub-interposer substrate, and mounting the first sub-interposersubstrate on a package substrate.

According to an embodiment of the inventive concept, a semiconductorpackage may include a package substrate, a first interposer substratemounted on the package substrate, the first interposer substrateincluding a first sub-interposer substrate and a second sub-interposersubstrate that contact each other, and a semiconductor chip mounted onthe first interposer substrate. The first sub-interposer substrate mayinclude an interconnection pattern provided therein. The secondsub-interposer substrate may include a through electrode, whichpenetrates the second sub-interposer substrate and contacts theinterconnection pattern. At an interface between the firstsub-interposer substrate and the second sub-interposer substrate, theinterconnection pattern and the through electrode may constitute asingle body formed of the same material as each other.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a sectional view illustrating a semiconductor packageaccording to an embodiment of the inventive concept.

FIGS. 2A and 2B are enlarged views illustrating a first interposersubstrate according to an embodiment of the inventive concept.

FIG. 3 is a sectional view illustrating a semiconductor packageaccording to an embodiment of the inventive concept.

FIG. 4 is an enlarged view illustrating a first interposer substrateaccording to an embodiment of the inventive concept.

FIG. 5 is a sectional view illustrating a semiconductor packageaccording to an embodiment of the inventive concept.

FIG. 6 is an enlarged view illustrating a first interposer substrateaccording to an embodiment of the inventive concept.

FIGS. 7 to 16 are sectional views illustrating a method of fabricating asemiconductor package, according to an embodiment of the inventiveconcept.

FIGS. 17 and 18 are sectional views illustrating a method of fabricatinga semiconductor package, according to an embodiment of the inventiveconcept.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

Example embodiments of the inventive concepts will now be described morefully with reference to the accompanying drawings, in which exampleembodiments are shown. FIG. 1 is a sectional view illustrating asemiconductor package according to an embodiment of the inventiveconcept. FIGS. 2A and 2B are enlarged views, each of which illustrates afirst interposer substrate according to an embodiment of the inventiveconcept and corresponds to a portion ‘A’ of FIG. 1. FIG. 3 is asectional view illustrating a semiconductor package according to anembodiment of the inventive concept. FIG. 4 is an enlarged view, whichillustrates a first interposer substrate according to an embodiment ofthe inventive concept and corresponds to a portion ‘B’ of FIG. 3.

Referring to FIG. 1, a semiconductor package 10 may include a packagesubstrate 100, a first interposer substrate 200 mounted on the packagesubstrate 100, second interposer substrates 300 on the first interposersubstrate 200, and at least one semiconductor chip 400/500 mounted onthe second interposer substrates 300. Each semiconductor chip 400/500may be a die including an integrated circuit and formed from asemiconductor wafer. In some embodiments, a stack of chips may be usedin place of each chip 400 or 500.

The package substrate 100 may be provided. The package substrate 100 mayinclude a printed circuit board (PCB). In certain embodiments, thepackage substrate 100 may be a structure, in which an insulating layerand an interconnection layer are alternately stacked. Substrate pads(not shown) may be disposed on a top surface 100 a of the packagesubstrate 100.

Outer terminals 105 (e.g., external connection terminals) may bedisposed below the package substrate 100. In detail, the outer terminals105 may be disposed on terminal pads (not shown), which are disposed ona bottom surface 100 b of the package substrate 100. The outer terminals105 may include solder balls or solder bump, and depending on the kindof the outer terminals 105, the semiconductor package 10 may be one of aball grid array (BGA) structure, a fine ball-grid array (FBGA)structure, or a land grid array (LGA) structure.

The first interposer substrate 200 may be provided on the packagesubstrate 100. The first interposer substrate 200 may be mounted on thetop surface 100 a of the package substrate 100. For example, the firstinterposer substrate 200 may be electrically connected to the packagesubstrate 100 through first connection terminals 205. The structure ofthe first interposer substrate 200 will be described in more detailbelow.

Referring to FIGS. 1 and 2A, the first interposer substrate 200 mayinclude a first sub-interposer substrate 210, a second sub-interposersubstrate 220, circuit patterns, and an integrated device 230, and here,the circuit patterns may be disposed in the first and secondsub-interposer substrates 210 and 220 to constitute an electric circuit.The circuit patterns may include a first interconnection pattern 218,which is provided in the first sub-interposer substrate 210, and asecond interconnection pattern 224, which is provided in the secondsub-interposer substrate 220. The integrated device 230 (e.g., anintegrated circuit device) may be provided in the first sub-interposersubstrate 210.

The first sub-interposer substrate 210 may be provided on the packagesubstrate 100. The first sub-interposer substrate 210 may include afirst base layer 212, the first interconnection pattern 218, and theintegrated device 230.

The first base layer 212 may include silicon (Si). Accordingly, thefirst sub-interposer substrate 210 may be referred to as a first siliconinterposer. Since the silicon in the first base layer 212 has highthermal conductivity, heat, which is generated in the at least onesemiconductor chip 400/500 to be described below, may be easilyexhausted to the outside through the first interposer substrate 200. Inaddition, since the silicon in the first base layer 212 has highhardness, it may be possible to suppress a warpage issue of the firstinterposer substrate 200, which may be caused by heat provided in afabrication process or during operations of the semiconductor package10.

The first interconnection pattern 218 may be provided in the first baselayer 212. The first interconnection pattern 218 may be a pattern forredistribution of the at least one semiconductor chip 400/500, whichwill be described below. For example, a portion of the firstinterconnection pattern 218 may include a circuit interconnection line214, which is extended parallel to the top surface 100 a of the packagesubstrate 100 (e.g., horizontally), and first through electrodes 216,which are provided to vertically penetrate the first base layer 212.Other portions of the first interconnection pattern 218 may constitutefirst pads 214 a, which are exposed on a bottom surface 212 a of thefirst base layer 212, and second pads 214 b, which are exposed on a topsurface 212 b of the first base layer 212. The first pads 214 a and thesecond pads 214 b may be electrically connected to each other by thecircuit interconnection line 214 and the first through electrodes 216and may constitute a redistribution circuit, along with the circuitinterconnection line 214 and the first through electrodes 216. Thoughnot shown in FIG. 2A, the redistribution connections may occur in atleast two different horizontal directions to achieve the electricalconnection between the first pads 214 and second pads 214 b. Here, awidth W1 (e.g., horizontal width) of the first through electrodes 216may be larger than 1/10 times a thickness T1 (e.g., a verticalthickness) of the first base layer 212. Therefore, the first throughelectrodes 216 may have an aspect ratio of 0.1 or larger (e.g., in someembodiments between 0.1 and 2.0). The first interconnection pattern 218may be formed of or include at least one of conductive materials (e.g.,metallic materials).

The first connection terminals 205 may be provided on the bottom surface212 a of the first base layer 212. The first connection terminals 205may be provided between substrate pads (not shown) of the packagesubstrate 100 and the first pads 214 a of the first sub-interposersubstrate 210. The first connection terminals 205 may electricallyconnect the first sub-interposer substrate 210 to the package substrate100. The first connection terminals 205 may include, for example, solderballs or solder bumps.

The integrated device 230 may be provided in the first base layer 212.The integrated device 230 may include a passive device. For example, theintegrated device 230 may include a capacitor CA. The capacitor CA mayinclude a first conductive layer 232, an insulating layer 236, and asecond conductive layer 234. The first conductive layer 232 and thesecond conductive layer 234 may be spaced apart from each other, and theinsulating layer 236 may be provided between the first conductive layer232 and the second conductive layer 234. The first conductive layer 232,the insulating layer 236, and the second conductive layer 234 may bestacked in a direction perpendicular to the top surface 100 a of thepackage substrate 100. The capacitor CA may be electrically connected tothe first interconnection pattern 218 of the first sub-interposersubstrate 210. For example, at least one of the first conductive layer232 and the second conductive layer 234 may be a portion of the firstinterconnection pattern 218, which is extended parallel to the topsurface 100 a of the package substrate 100. In other words, theintegrated device 230 may be a capacitor including the insulating layer236, which is provided between two separate conductive portions of thefirst interconnection pattern 218. In certain embodiments, although notshown, the integrated device 230 may include an inductor or a resistor.

Alternatively, the integrated device 230 may include an active device.For example, as shown in FIG. 2B, the integrated device 230 may be atransistor TR. The first base layer 212 may be formed of silicon (Si),and thus, a silicon-based transistor TR may be provided on the firstbase layer 212. Here, the transistor TR may be buried in the first baselayer 212. For example, each element (e.g., a source/drain S/D and agate GT) of the transistor TR may be buried in the first base layer 212,and the transistor TR may not protrude above the top surface 212 b ofthe first base layer 212. The source/drain S/D and the gate GT of thetransistor TR may be electrically connected to the first interconnectionpattern 218 of the first sub-interposer substrate 210.

According to an embodiment of the inventive concept, the integrateddevice 230 may be provided in the first sub-interposer substrate 210.This may make it possible to improve performance characteristics of thefirst interposer substrate 200. In addition, there is no need to providean additional space for mounting devices (e.g., the integrated device230) on the package substrate 100 or the first interposer substrate 200,and this may make it possible to reduce a size of the semiconductorpackage 10.

Referring further to FIGS. 1 and 2A, the second sub-interposer substrate220 may be provided on the first sub-interposer substrate 210. Thesecond sub-interposer substrate 220 may include a second base layer 222and the second interconnection pattern 224. The second sub-interposersubstrate 220 may have the same shape and size from a top-down view asthe first sub-interposer substrate 210, such that all edges of thesecond sub-interposer substrate 220 align and overlap with respectiveedges of the first sub-interposer substrate 210. As such, outer sidewalls of the second sub-interposer substrate 220 may be coplanar withrespective outer sidewalls of the first sub-interposer substrate 210.

The second base layer 222 may be disposed on the first base layer 212. Abottom surface 222 a of the second base layer 222 may be in contact withthe top surface 212 b of the first base layer 212 at an interfacebetween the first base layer 212 and the second base layer 222. As usedherein, “contact” or “in contact with” refers to a direct physicalconnection, i.e., touching, unless the context indicates otherwise. Forexample, in certain embodiments, the second base layer 222 and the firstbase layer 212 may be provided as separate elements, and in this case,an interface between the first base layer 212 and the second base layer222 may be visually recognized. In some embodiments, the second baselayer 222 may include the same material as the first base layer 212. Forexample, the second base layer 222 may include silicon (Si).Accordingly, the first sub-interposer substrate 210 may be referred toas a first silicon interposer. In this case, the first base layer 212and second base layer 222 may connect at an interface therebetween, butmay form a visually continuous boundary interface where they connect toeach other. Since the silicon in the second base layer 222 has highthermal conductivity, heat, which is generated in the at least onesemiconductor chip 400/500 to be described below, may be easilyexhausted to the outside through the first interposer substrate 200. Inaddition, since the silicon in the second base layer 222 has highhardness, it may be possible to suppress a warpage issue of the firstinterposer substrate 200, which may be caused by heat provided in afabrication process or during operations of the semiconductor package10.

The second interconnection pattern 224 may be provided in the secondbase layer 222. The second interconnection pattern 224 may be used toelectrically connect the at least one semiconductor chip 400/500 to thefirst interconnection pattern 218 of the first sub-interposer substrate210. For example, the second interconnection pattern 224 may include thesecond through electrodes 224, which are provided to verticallypenetrate the second base layer 222, and here, the second throughelectrodes and the second interconnection pattern may be the sameelements and will be identified using the same reference number 224. Thesecond through electrodes 224 may be exposed through a top surface 222 band a bottom surface 222 a of the second base layer 222. At an interfacebetween the first and second sub-interposer substrates 210 and 220,bottom surfaces of the second through electrodes 224 may connect to thesecond pads 214 b of the first interconnection pattern 218 of the firstsub-interposer substrate 210. In an embodiment, the second throughelectrodes 224 and the second pads 214 b may be continuously connectedto each other (e.g., they may be unitarily disposed in a single body),such that an interface IF1 between the second through electrodes 224 andthe second pads 214 b is not visually recognized. For example, thesecond through electrodes 224 and the second pads 214 b may be formed ofthe same material, such that the interface IF1 is not formed between thesecond through electrodes 224 and the second pads 214 b. For example,the second through electrodes 224 and a portion of the firstinterconnection pattern 218 may be provided as a single, unitaryelement. A width W2 of the second through electrodes 224 may be largerthan 1/10 times a thickness T2 of the second base layer 222. In otherwords, the second through electrodes 224 may have an aspect ratio (ofwidth to height) of 0.1 or larger. The second interconnection pattern224 may be formed of or include at least one of conductive materials(e.g., metallic materials).

The first interposer substrate 200 may be formed to have theafore-described structural features.

In general, through electrodes may be formed by filling a penetrationhole, which penetrates a base layer of an interposer substrate, with aconductive material. Here, if an aspect ratio of the penetration hole isless than 0.1, it may be difficult to fill the penetration hole with theconductive material, owing to a wetting property of the conductivematerial. This will be described in more detail in the topic of afabricating method.

As a semiconductor chip is scaled down, there is an increasingdifficulty in forming interconnection lines in a desired number. Inaddition, the greater the number of circuit patterns in the interposersubstrate, the larger an area of the interposer substrate. A way ofreducing a width of the interconnection line of the circuit pattern anda width of the through electrode may be used to reduce the area of theinterposer substrate, but this may lead to a reduction in thickness ofthe interposer substrate. It is difficult to handle a thin interposersubstrate during a process of fabricating a semiconductor package, andfurthermore the thin interposer substrate may be easily cracked orbroken. By contrast, in the case where the thickness of the interposersubstrate increases, it may be necessary to increase the width of thethrough electrode and consequently to increase an area of the interposersubstrate.

According to an embodiment of the inventive concept, the throughelectrodes 216 and 224 (or the interconnection line 214) may beseparately formed in the first and second sub-interposer substrates 210and 220, respectively, which have small thicknesses. Thus, it may bepossible to reduce widths of the interconnection line 214 and thethrough electrodes 216 and 224 and consequently to reduce a size of thesemiconductor package 10. In addition, the first and secondsub-interposer substrates 210 and 220, which have small thicknesses, maybe bonded to form a relatively-thick single interposer substrate (e.g.,the first interposer substrate 200), and in this case, the firstinterposer substrate 200 may have an improved structural durability.

Referring to FIGS. 1 and 2A, the second interposer substrates 300 may bedisposed on the first interposer substrate 200. The second interposersubstrates 300 may be mounted on the second sub-interposer substrate 220of the first interposer substrate 200. For example, each of the secondinterposer substrates 300 may be mounted on the second sub-interposersubstrate 220 and may be connected to the second sub-interposersubstrate 220 through second connection terminals 305, which aredisposed on bottom surfaces of the second interposer substrates 300.

Each of the second interposer substrates 300 may include a third baselayer 302 and a third interconnection pattern 304, which is provided inthe third base layer 302. For the sake of simplicity, just one of thesecond interposer substrates 300 will be described as an example.

The third base layer 302 may be disposed on the first interposersubstrate 200. Each of the second interposer substrates 300 may be asilicon substrate or an insulating substrate. For example, the thirdbase layer 302 may include silicon (Si) or may include an insulatingmaterial, such as sapphire or polymer.

The third interconnection pattern 304 may be provided in the third baselayer 302. The third interconnection pattern 304 may be a pattern forredistribution of the at least one semiconductor chip 400/500, whichwill be described below. For example, a portion of the thirdinterconnection pattern 304 may include a circuit interconnection line,which is extended parallel to the top surface 100 a of the packagesubstrate 100, and through electrodes, which are provided to verticallypenetrate the third base layer 302. The through electrodes of the thirdinterconnection pattern 304 may have an aspect ratio of 0.1 or larger.The third interconnection pattern 304 may be formed of or include atleast one of conductive materials (e.g., metallic materials). Thecircuit interconnection line and the through electrodes of the thirdinterconnection pattern 304 may constitute an electrically-connectedredistribution circuit.

In the case where a plurality of the second interposer substrates 300are provided, it may be possible to efficiently construct aredistribution structure for at least one semiconductor chip 400/500.For example, in the case where a plurality of the semiconductor chips400/500 are provided, the second interposer substrates 300 may be usedto construct a redistribution structure for each of the semiconductorchips 400/500, and the first interposer substrate 200 may be used toconstruct a redistribution structure for the second interposersubstrates 300. Thus, even if many electric components are provided inthe semiconductor package 10 (e.g., there are many chips to be mounted),it may be possible to easily construct a redistribution structure forthe interconnection lines.

Unlike the illustrated structure, the second interposer substrate 300may be provided as a single element. The description that follows willrefer to an example in which a plurality of the second interposersubstrates 300 are provided.

In certain embodiments, the second interposer substrates 300 may beprovided to be in contact with the first interposer substrate 200. Forexample, as shown in FIGS. 3 and 4, a bottom surface 302 a of each ofthe second interposer substrates 300 may be in contact with the topsurface 222 b of the second sub-interposer substrate 220 of the firstinterposer substrate 200, and hereinafter, these surfaces may bereferred to as the same reference number as the top surface 222 b of thesecond base layer 222. Here, the third base layer 302 may be provided asan element distinct from the second base layer 222, and in this case, aninterface between the third base layer 302 and the second base layer 222may be visually revealed. The third interconnection pattern 304 may bein contact with the second through electrodes 224 of the secondsub-interposer substrate 220, on the bottom surface 302 a of the thirdbase layer 302.

Here, the third interconnection pattern 304 and the second throughelectrodes 224 may have a continuous, unitary structure, and aninterface IF2 between the third interconnection pattern 304 and thesecond through electrodes 224 may not be visually revealed. For example,a portion of the third interconnection pattern 304 and the secondthrough electrode 224 may be provided as a single element.

As shown in FIGS. 1 and 2A, at least one semiconductor chip 400/500 maybe disposed on the second interposer substrates 300. For example, afirst semiconductor chip 400 and a second semiconductor chip 500 may bemounted on the second interposer substrates 300. Here, each of the firstand second semiconductor chips 400 and 500 may be provided in plural, asthe need arises. The first and second semiconductor chips 400 and 500may be electrically connected to the second interposer substrates 300through first chip terminals 405 and second chip terminals 505,respectively, which are provided on bottom surfaces thereof. The firstand second semiconductor chips 400 and 500 may be redistributed by thesecond interposer substrates 300 and the first interposer substrate 200.Each of the first and second semiconductor chips 400 and 500 may befirst redistributed in a small region by a plurality of the secondinterposer substrates 300 and then may be additionally redistributed bythe first interposer substrate 200. Thus, even if the first and secondsemiconductor chips 400 and 500 in the semiconductor package 10 havemany terminals or pads for electric connection paths, it may be possibleto easily construct a redistribution structure for the first and secondsemiconductor chips 400 and 500 and to improve performance of thesemiconductor package 10.

In the case where a plurality of the second interposer substrates 300are provided, the first semiconductor chip 400 may be mounted on one ofthe second interposer substrates 300 or may be mounted to be overlappedwith at least one of the second interposer substrates 300. For example,when viewed in a plan view, the first semiconductor chip 400 may beprovided to overlap with the entirety of one of the second interposersubstrates 300 or may be provided to overlap all of the plurality of thesecond interposer substrates 300. Here, the second semiconductor chip500 may be mounted on the second interposer substrates 300, on which thefirst semiconductor chip 400 is not mounted, or may be mounted on one ofthe second interposer substrates 300, along with the first semiconductorchip 400. In the case where the first and second semiconductor chips 400and 500 are mounted on one of the second interposer substrates 300, thefirst and second semiconductor chips 400 and 500 may be electricallyconnected to each other through the second interposer substrate 300.Here, an electric connection path between the first and secondsemiconductor chips 400 and 500 may be formed through only the secondinterposer substrate 300, and in this case, a length of the electricconnection path may be short. This may make it possible to improveperformance of the semiconductor package 10 and to allow for ahigh-speed operation of the semiconductor package 10.

The first semiconductor chip 400 and the second semiconductor chip 500may be chips of different kinds. The first semiconductor chip 400 mayinclude an application specific integrated circuit (ASIC) chip. Thefirst semiconductor chip 400 may be used as, for example, a non-memorychip, such as an application processor. In certain embodiments, thefirst semiconductor chip 400 may be, for example, a logic chip or amemory chip. The second semiconductor chip 500 may be, for example, amemory chip. For example, the memory chip may be DRAM, NAND flash, NORflash, PRAM, ReRAM, or MRAM chip. In certain embodiments, the secondsemiconductor chip 500 may include a high bandwidth memory (HBM) device,in which a plurality of chips are stacked.

So far, an example in which the semiconductor package 10 havingsemiconductor chips of different kinds (e.g., the first and secondsemiconductor chips 400 and 500) has been described, but the inventiveconcept is not limited to this example. The semiconductor package 10 mayinclude semiconductor chips of one kind or of three or more kinds, whichare mounted on the second interposer substrate 300.

A heat radiator 600 may be provided on the first and secondsemiconductor chips 400 and 500. For example, the heat radiator 600 maybe disposed to be in contact with the top surface of the firstsemiconductor chip 400 and the top surface of the second semiconductorchip 500. The heat radiator 600 may be attached to the first and secondsemiconductor chips 400 and 500 using an adhesive film (not shown), andthus may contact each other through an adhesive film. As an example, theadhesive film (not shown) may include a thermal interface material(TIM), such as thermal grease. The heat radiator 600 may exhaust heat,which is generated in the first and second semiconductor chips 400 and500, to the outside. The heat radiator 600 may include a heat sink.

FIG. 5 is a sectional view illustrating a semiconductor packageaccording to an embodiment of the inventive concept. FIG. 6 is anenlarged view, which illustrates a first interposer substrate accordingto an embodiment of the inventive concept and corresponds to a portion‘C’ of FIG. 5. For concise description, elements previously describedwith reference to FIGS. 1 to 4 may be identified by the same referencenumber without repeating an overlapping description thereof. Technicalfeatures different from the embodiments of FIGS. 1 to 4 will be mainlymentioned in the following description of the present embodiment.

Referring to FIGS. 5 and 6A, a semiconductor package 20 may include thepackage substrate 100, the first interposer substrate 200 mounted on thepackage substrate 100, and at least one semiconductor chip 400/500mounted on the first interposer substrate 200.

The at least one semiconductor chip 400/500 may be placed on the firstinterposer substrate 200. For example, the first and secondsemiconductor chips 400 and 500 may be mounted on the first interposersubstrate 200. Here, each of the first and second semiconductor chips400 and 500 may be provided in plural, as the need arises. The first andsecond semiconductor chips 400 and 500 may be electrically connected tothe first interposer substrate 200 through the first and second chipterminals 405 and 505, respectively, which are provided on bottomsurfaces thereof. For example, the first and second chip terminals 405and 505 may be coupled to the second through electrodes 224 of thesecond sub-interposer substrate 220 of the first interposer substrate200. The first and second semiconductor chips 400 and 500 may beredistributed by the first interposer substrate 200.

FIGS. 7 to 16 are sectional views illustrating a method of fabricating asemiconductor package, according to an embodiment of the inventiveconcept. Here, FIGS. 7 and 8 illustrate a method of forming a firststructure. FIGS. 9 to 14 illustrate a method of forming a firstinterposer substrate.

Referring to FIG. 7, a carrier substrate 700 is provided. The carriersubstrate 700 may include an insulating substrate. In an embodiment, thecarrier substrate 700 may include a flexible substrate. In certainembodiments, the carrier substrate 700 may be the heat radiator 600(e.g., see FIG. 1).

The first and second semiconductor chips 400 and 500 are provided on thecarrier substrate 700. The first and second semiconductor chips 400 and500 may be adhered to the carrier substrate 700, for example, by anadhesive material. Here, the first and second semiconductor chips 400and 500 may be disposed such that non-active surfaces thereof face thecarrier substrate 700 and active surfaces thereof face away from thecarrier substrate 700. For example, a non-active surface of each of thefirst and second semiconductor chips 400 and 500 may be attached to thecarrier substrate 700, and the first and second chip terminals 405 and505 may be exposed to the outside in an upward direction of the carriersubstrate 700.

Referring to FIG. 8, the second interposer substrates 300 may beprovided on the first and second semiconductor chips 400 and 500. Thesecond interposer substrates 300 may be mounted on the first and secondsemiconductor chips 400 and 500 to form a first structure ST1. Thesecond interposer substrates 300 may be electrically connected to thefirst and second chip terminals 405 and 505 of the first and secondsemiconductor chips 400 and 500. Here, the second connection terminals305 of the second interposer substrates 300 may be disposed at a sideopposite to the carrier substrate 700.

In certain embodiments, a process of mounting the second interposersubstrates 300 on the first and second semiconductor chips 400 and 500may not be performed. In this case, the first structure ST1 would notinclude the second interposer substrates 300, and as a result, thesemiconductor package 20 described with reference to FIGS. 5 and 6 wouldbe fabricated.

The description that follows will refer to an example, in which thefirst structure ST1 is configured to include the second interposersubstrates 300.

Referring to FIG. 9, the second sub-interposer substrate 220 is attachedto the first sub-interposer substrate 210. For example, the first andsecond sub-interposer substrates 210 and 220 may be a wafer-levelsubstrate made of a semiconductor material (e.g., silicon (Si)). Thefirst sub-interposer substrate 210 may include the first base layer 212,the first interconnection pattern 218, and the integrated device 230.The second sub-interposer substrate 220 may include the second baselayer 222 and the second interconnection pattern 224. A sawing line SLin FIG. 9 indicates a region of the first and second sub-interposersubstrates 210 and 220, on which a subsequent sawing process will beperformed. Hereinafter, a method of attaching the first and secondsub-interposer substrates 210 and 220 will be described in more detailwith reference to FIGS. 10 to 14. FIGS. 10 to 14 illustrate a method ofattaching the first and second sub-interposer substrates 210 and 220 andare enlarged sectional views illustrating a portion of the first andsecond sub-interposer substrates 210 and 220.

Referring to FIG. 10, the second base layer 222 may be provided. Thesecond base layer 222 may include silicon (Si), for example.

Penetration holes TH may be formed in the second base layer 222. Thepenetration holes TH may be formed by, for example, a laser drillingprocess, a deep reactive ion etching (DRIP) process, or the like. Thepenetration holes TH may extend from the top surface 222 b of the secondbase layer 222 toward the bottom surface 222 a. For example, thepenetration holes TH may be formed to vertically penetrate the secondbase layer 222. A width W3 of the penetration holes TH may be largerthan 1/10 times the thickness T2 of the second base layer 222. In otherwords, the penetration holes TH may have an aspect ratio of 0.1 orlarger. The penetration holes TH may define regions of the second baselayer 222, in which the second through electrodes 224 (e.g., see FIG.11) will be formed in a subsequent process.

Referring to FIG. 11, the second through electrode 224 may be formed inthe penetration holes TH. For example, a conductive material may beformed to fill the penetration holes TH. In an embodiment, anelectro-plating method using a seed layer may be performed to fill thepenetration holes TH with the conductive material. In certainembodiments, the conductive material may be deposited by using at leastone of blanket deposition processes, such as sputtering, evaporation,jet vapor deposition, spin-coating, screen or stencil printing,immersion, or pick-and-place/reflow processes. For some of theprocesses, a planarization process, such as a grinding or etchingprocess may be further performed in a subsequent step. The conductivematerial filling the penetration holes TH may form the second throughelectrode 224 of the second sub-interposer substrate 220.

In the process of filling the penetration holes TH with the conductivematerial, if a width of the penetration holes TH is less than 1/10 timesa thickness of the second base layer 222, the penetration holes TH maynot be fully filled with the conductive material. FIG. 12 illustrates anexample, in which an aspect ratio of the penetration holes TH is lessthan 0.1 and the penetration holes TH are not fully filled with theconductive material. In detail, the conductive material may be suppliedinto the penetration holes TH through upper or lower openings of thepenetration holes TH. Here, due to wetting characteristics of theconductive material, a penetration depth, to which the conductivematerial can be supplied, may be determined by a width W4 of thepenetration holes TH. In the case where a depth of the penetration holesTH (i.e., a thickness T3 of the second base layer 222) is greater thanthe penetration depth, an air gap AG, which causes a wire-cutting (e.g.open circuit) issue in the second through electrodes 224, may be formedin the second through electrode 224.

According to an embodiment of the inventive concept, the circuitpatterns, such as the through electrodes 216 and 224, may be separatelyformed in the thin sub-interposer substrates 210 and 220, respectively,and thus, the through electrodes 216 and 224 may be formed to have smallwidths in relation to the combined thickness of the sub-interposersubstrates 210 and 220. This may be advantageous to increasing anintegration density of the semiconductor package 10.

In certain embodiments, the second through electrodes 224 may be formedby various methods. For example, a hole, which extends from the topsurface 222 b of the second base layer 222 in an inward direction, maybe formed in the second base layer 222. The hole may extend from the topsurface 222 b of the second base layer 222 but may be spaced apart fromthe bottom surface 222 a of the second base layer 222. The secondthrough electrode 224 may be formed by filling the hole with aconductive material. Thereafter, a grinding process may be performed onthe bottom surface 222 a of the second base layer 222 to expose thesecond through electrode 224. As a result of the above process, the topsurface of the second through electrode 224 may be coplanar with the topsurface 222 a of the second base layer 222 and the bottom surface of thesecond through electrode 224 may be coplanar with the bottom surface 222b of the second base layer 222. In this case, if the aspect ratio of thehole is less than 0.1 as described with reference to FIG. 12, it may notbe easy to fill the hole with the conductive material.

Referring to FIG. 13, the first sub-interposer substrate 210 may beprovided. The first sub-interposer substrate 210 may be formed byforming the first interconnection pattern 218 and the integrated device230 in the first base layer 212. The first interconnection pattern 218may include the circuit interconnection line 214 and the first throughelectrode 216 (see, e.g., FIG. 2A). The formation of the circuitinterconnection line 214 may include forming a conductive material on asilicon layer constituting the first base layer 212 and then patterningthe conductive material. Thereafter, the first base layer 212 may beformed by additionally depositing a silicon (Si) layer on the siliconlayer. In certain embodiments, the formation of the circuitinterconnection line 214 may include forming a conductive material on asurface of the first base layer 212 and then patterning the conductivematerial. A portion of the first interconnection pattern 218 formed onthe surface of the first base layer 212 may be used as the first pads214 a (e.g., see FIG. 2A), which are exposed on the bottom surface 212 aof the first base layer 212, and as the second pads 214 b (e.g., seeFIG. 2B), which are exposed on the top surface 212 b of the first baselayer 212. The first through electrodes 216 may be formed by the same orsimilar (ex, the damascene process) method as that for the secondthrough electrodes 224. The integrated device 230 may be formed alongwith the first interconnection pattern 218 or may be separately formedon the surface of the first base layer 212.

The second sub-interposer substrate 220 may be disposed on the firstsub-interposer substrate 210. Here, the top surface 212 b of the firstsub-interposer substrate 210, on which the integrated device 230 isformed, may face the bottom surface 222 a of the second sub-interposersubstrate 220.

Referring to FIG. 14, the second sub-interposer substrate 220 maycontact the first sub-interposer substrate 210. For example, the secondpads 214 b of the first sub-interposer substrate 210 may contact thesecond through electrodes 224 of the second sub-interposer substrate220. The first base layer 212 may contact the second base layer 222.

The second pads 214 b of the first sub-interposer substrate 210 may becombined to the second through electrodes 224 of the secondsub-interposer substrate 220. For example, each of the second pads 214 bmay be combined with a corresponding one of the second throughelectrodes 224 to form a single body. The second pads 214 b and thesecond through electrodes 224 may be combined with each other in anatural manner. In detail, the second pads 214 b and the second throughelectrodes 224 may be formed of the same material (e.g., copper (Cu)),and in this case, the second pads 214 b and the second throughelectrodes 224 may be combined with each other by a hybrid bondingprocess between copper-copper metals (e.g., copper-copper hybridbonding), which is caused by surface activation at the interface IF1 ofthe second pads 214 b and the second through electrodes 224 in contactwith each other. Here, for easy combining between the second pads 214 band the second through electrodes 224, a surface activation process maybe performed on surfaces of the second pads 214 b and the second throughelectrodes 224, before the process of combining the second pads 214 band the second through electrodes 224. The surface activation processmay include a plasma process. In addition, for easy combining betweenthe second pads 214 b and the second through electrodes 224, pressureand heat may be applied to the second pads 214 b and the second throughelectrodes 224. The pressure may be lower than, for example, about 30MPa, and the heat may be provided by an annealing process of heating thesecond pads 214 b and the second through electrodes 224 to a temperatureranging from about 100° C. to about 500° C. In certain embodiments, thehybrid bonding process may be performed under different conditions ofpressure and temperature. In the case where the second pads 214 b andthe second through electrodes 224 are combined with each other, theinterface IF1 between the second pads 214 b and the second throughelectrodes 224 may disappear so that each second pad 214 b andrespective second through electrode 224 forms a single unitary piece orstructure. In certain cases, the interface IF1 between the second pads214 b and the second through electrodes 224 may appear visually.

The first and second sub-interposer substrates 210 and 220 may becombined with each other through a bonding between metals having strongbonding strengths, and thus, it may be possible to improve structuralstability of the first interposer substrate 200 to be formed in asubsequent process. In addition, the first and second sub-interposersubstrates 210 and 220 may be directly combined with each other, withoutadditional connection terminals (e.g., solder balls, solder bumps, orthe like). This may make it possible to reduce a size of the firstinterposer substrate 200 and improve structural stability of the firstinterposer substrate 200. As a result of the combining, a pair ofelectrically connected through electrodes that includes a second throughelectrode 224 and a first through electrode 216, that are part of aunitary piece and that are connected to transmit a signal through thethickness of the first interposer substrate 200 may have an aspect ratioin relation to the thickness of the first interposer substrate 200 lessthan 0.1 (e.g., it may be between 0.05 and 0.1.

Referring to FIG. 15, the first structures ST1 may be mounted on thesecond sub-interposer substrate 220. The first structures ST1 may bemounted in a flip-chip manner. For example, the first structures ST1 maybe mounted on the second sub-interposer substrate 220 using the secondconnection terminals 305 of the second interposer substrates 300.

In certain embodiments, the mounting of the first structures ST1 may beperformed in a manner different from the flip-chip manner. For example,the first structures ST1 may be disposed on the second sub-interposersubstrate 220 in such a way that bottom surfaces of the secondinterposer substrates 300 are in contact with the top surface of thesecond sub-interposer substrate 220. Here, the second through electrode224 of the second sub-interposer substrate 220 may be in contact with aportion of the third interconnection pattern 304 of the secondinterposer substrates 300. The third interconnection pattern 304 and thesecond through electrodes 224 may be combined to each other to form asingle body. In detail, a portion of the third interconnection pattern304 and the second through electrodes 224 may be formed of the samematerial (e.g., copper (Cu)), and in this case, the thirdinterconnection pattern 304 and the second through electrodes 224 may becombined with each other by a copper-copper hybrid bonding, which iscaused by surface activation at an interface between the thirdinterconnection pattern 304 and the second through electrodes 224 incontact with each other. In this case, the semiconductor packagedescribed with reference to FIGS. 3 and 4 may be fabricated.

Hereinafter, the description will be given based on FIG. 15.

The carrier substrate 700 may be removed. In certain embodiments, thecarrier substrate 700 may not be removed, if the carrier substrate 700includes the heat radiator.

Referring to FIG. 16, the first and second sub-interposer substrates 210and 220 may be cut to separate the first structures ST1 from each other.For example, a singulation process may be performed on the first andsecond sub-interposer substrates 210 and 220 along the sawing line SL ofFIG. 15. In this case, the first and second sub-interposer substrates210 and 220 may be sawed to form a plurality of first interposersubstrates 200 that are separated from each other.

Here, the first structures ST1 may be mounted on each of the firstinterposer substrates 200, and they may constitute a plurality of secondstructures ST2.

Referring back to FIG. 1, the second structures ST2 may be mounted onthe package substrate 100. The second structures ST2 may be mounted in aflip-chip manner. For example, the first connection terminals 205 may beformed on the bottom surface of the first interposer substrate 200, andthen, the second structure ST2 may be mounted on the package substrate100 using the first connection terminals 205.

Thereafter, the heat radiator 600 may be attached to the top surfaces ofthe first and second semiconductor chips 400 and 500. The heat radiator600 may be attached to the first and second semiconductor chips 400 and500 using an adhesive film (not shown). As an example, the adhesive film(not shown) may include a thermal interface material (TIM), such asthermal grease.

The semiconductor package 10 may be fabricated through theafore-described method.

FIGS. 17 and 18 are sectional views illustrating a method of fabricatinga semiconductor package, according to an embodiment of the inventiveconcept. For concise description, an element previously described withreference to FIGS. 9 to 16 may be identified by the same referencenumber without repeating an overlapping description thereof.

Referring to FIG. 17, a sawing process may be performed on the resultingstructure of FIG. 9. For example, the first and second sub-interposersubstrates 210 and 220 may be sawed along the sawing line SL to form aplurality of first interposer substrates 200 that are separated fromeach other.

Referring to FIG. 18, the first structure ST1 may be mounted on thefirst interposer substrate 200, and as a result, the second structuresST2 may be formed. The first structures ST1 may be mounted in aflip-chip manner. For example, the first structures ST1 may be mountedon the first interposer substrate 200 using the second connectionterminals 305 of the second interposer substrate 300.

Thereafter, the carrier substrate 700 may be removed. In certainembodiments, the carrier substrate 700 may not be removed, if thecarrier substrate 700 includes the heat radiator.

Referring back to FIG. 1, the second structure ST2 may be mounted on thepackage substrate 100. The second structures ST2 may be mounted in aflip-chip manner (e.g., using first connection terminals 205 such asdiscussed previously).

Thereafter, the heat radiator 600 may be attached to top surfaces of thefirst and second semiconductor chips 400 and 500. The heat radiator 600may be attached to the first and second semiconductor chips 400 and 500using an adhesive film (not shown).

The semiconductor package 10 may be fabricated through theafore-described method.

According to an embodiment of the inventive concept, it may be possibleto reduce widths of interconnection lines and through electrodes in asemiconductor package and thereby to reduce a size of the semiconductorpackage. In addition, two thin sub-interposer substrates (e.g., firstand second sub-interposer substrates) may be bonded to form arelatively-thick single interposer substrate (e.g., a first interposersubstrate), and this may make it possible to improve structuraldurability of the first interposer substrate.

According to an embodiment of the inventive concept, a semiconductorpackage may include a first interposer substrate, in which integrateddevices are provided, and thus, the first interposer substrate of highperformance may be provided. In addition, there is no need to provide anadditional space for mounting devices, on the package substrate or thefirst interposer substrate, and this may make it possible to reduce asize of the semiconductor package.

According to an embodiment of the inventive concept, even if manyinterconnection lines are provided in a semiconductor package, it may bepossible to easily construct a redistribution structure for theinterconnection lines and thereby to improve performance of thesemiconductor package.

While example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. Unless the contextindicates otherwise, these terms are only used to distinguish oneelement, component, region, layer or section from another element,component, region, layer or section, for example as a naming convention.Thus, a first element, component, region, layer or section discussedbelow in one section of the specification could be termed a secondelement, component, region, layer or section in another section of thespecification or in the claims without departing from the teachings ofthe present invention. In addition, in certain cases, even if a term isnot described using “first,” “second,” etc., in the specification, itmay still be referred to as “first” or “second” in a claim in order todistinguish different claimed elements from each other.

What is claimed is:
 1. A semiconductor package, comprising: a packagesubstrate; a first interposer substrate mounted on the packagesubstrate; a second interposer substrate disposed on the firstinterposer substrate; and a semiconductor chip mounted on the secondinterposer substrate, wherein the first interposer substrate comprises:a first base layer; a second base layer disposed on the first baselayer, a top surface of the first base layer contacting a bottom surfaceof the second base layer; a first pad exposed on the top surface of thefirst base layer and connected to a first interconnection pattern whichis in the first base layer; a second pad exposed on the bottom surfaceof the second base layer; and a third pad exposed on a top surface ofthe second base layer, wherein the first pad and the second pad areconnected to each other, at an interface between the first base layerand the second base layer, wherein a second interconnection pattern ofthe second interposer substrate is connected to the third pad, at aninterface between the second base layer of the first interposersubstrate and the second interposer substrate, and wherein the firstbase layer and the second base layer are each formed of silicon (Si). 2.The semiconductor package of claim 1, wherein the first pad and thesecond pad constitute a single body formed of the same material as eachother.
 3. The semiconductor package of claim 2, wherein the first padand the second pad comprise a metallic material.
 4. The semiconductorpackage of claim 1, wherein each of the second pad and the third pad areportions of a through electrode vertically penetrating the second baselayer.
 5. The semiconductor package of claim 4, wherein an aspect ratioof the through electrode ranges from 0.1 to 2.0.
 6. The semiconductorpackage of claim 1, wherein the third pad and the second interconnectionpattern of the second interposer substrate constitute a single bodyformed of the same metal material.
 7. The semiconductor package of claim1, wherein the second interposer substrate is provided in plural, andthe semiconductor chip is disposed, such that a portion thereof overlapstwo of the second interposer substrates in a plan view, and iselectrically connected to each of the two second interposer substrates.8. The semiconductor package of claim 1, further comprising anintegrated circuit device embedded in the first base layer and connectedto the first interconnection pattern, wherein the integrated circuitdevice is a capacitor or an active device.
 9. The semiconductor packageof claim 8, wherein the integrated circuit device comprises a firstconductive layer and a second conductive layer, which are extendedhorizontally and vertically spaced apart from each other in the firstbase layer, and an insulating layer provided between the firstconductive layer and the second conductive layer, and the firstconductive layer and the second conductive layer are parts of the firstinterconnection pattern.
 10. The semiconductor package of claim 1,wherein the semiconductor chip is mounted on the second interposersubstrate through a chip terminal which is disposed between thesemiconductor chip and a pad of the second interposer substrate.
 11. Thesemiconductor package of claim 1, wherein the first interposer substratefurther comprises connection terminals, which are disposed on a bottomsurface of the first base layer and are electrically connected to thefirst interconnection pattern, and the first interposer substrate ismounted on the package substrate through the connection terminals. 12.The semiconductor package of claim 1, further comprising a heat sinkdisposed on a top surface of the semiconductor chip.
 13. A semiconductorpackage, comprising: a package substrate; a first interposer substratemounted on the package substrate, the first interposer substratecomprising a first sub-interposer substrate and a second sub-interposersubstrate that contact each other; a second interposer substratedisposed on the first interposer substrate; and a semiconductor chipmounted on the second interposer substrate, wherein: the firstsub-interposer substrate comprises a first interconnection patternprovided therein, the second sub-interposer substrate comprises a bottompad and a top pad, which are connected each other through a viapenetrating the second sub-interposer substrate, at an interface betweenthe first sub-interposer substrate and the second sub-interposersubstrate, the first interconnection pattern and the bottom padconstitute a single body formed of the same material as each other, anda top surface of the first interposer substrate and a bottom surface ofthe second interposer substrate contact each other and are coplanar witheach other.
 14. The semiconductor package of claim 13, wherein a topsurface of the first interposer substrate and a bottom surface of thesecond interposer substrate contact each other and are coplanar witheach other.
 15. The semiconductor package of claim 14, wherein the firstinterconnection pattern and the bottom pad of the second sub-interposersubstrate are formed to constitute a continuous body, in which aninterface between the first interconnection pattern and the bottom padis absent.
 16. The semiconductor package of claim 13, wherein the secondinterposer substrate comprises a second interconnection pattern providedtherein, the second interconnection pattern and the top pad of thesecond sub-interposer substrate are formed to constitute a continuousbody, in which an interface between the second interconnection patternand the top pad is absent.
 17. The semiconductor package of claim 13,wherein the first sub-interposer substrate further comprises anintegrated device, which is provided therein and is electricallyconnected to the first interconnection pattern.
 18. The semiconductorpackage of claim 13, wherein the first pad and the second pad comprise ametallic material.
 19. The semiconductor package of claim 13, wherein anaspect ratio of the through electrode is in a range from 0.1 to 2.0. 20.The semiconductor package of claim 13, wherein the first base layer andthe second base layer are each formed of silicon (Si).